长波长QDVCSELs中的应变补偿理论

doi:10.13190/jbupt.201006.84.158

北京邮电大学学报 ›› 2010, Vol. 33 ›› Issue (6): 84-87.doi: 10.13190/jbupt.201006.84.158

长波长QDVCSELs中的应变补偿理论

冯昊,俞重远,刘玉敏

光通信与光电子学教育部重点实验室(北京邮电大学), 北京 100876

收稿日期:2010-01-05 修回日期:2010-01-11 出版日期:2010-12-28 发布日期:2011-01-07
通讯作者: 冯昊 E-mail:fenghao@bupt.edu.cn
基金资助:
国家高技术研究发展计划项目（2009AA03Z405）; 国家自然科学基金项目（60908028）；中央高校基本科研业务费专项项目（BUPT2009RC0411）

Analysis on Strain Compensation in LongWavelength QDVCSELs

Received:2010-01-05 Revised:2010-01-11 Online:2010-12-28 Published:2011-01-07
Contact: Feng Hao E-mail:fenghao@bupt.edu.cn

摘要/Abstract

摘要：

从理论角度定量地研究了量子点垂直腔表面发射激光器(QDVCSELs)中GaNAs应变补偿层对InAs/GaAs量子点阵列生长质量的改善作用，得出了不同补偿浓度和补偿位置对补偿效果影响的规律，得到了确定最佳补偿参数的途径.为长波长（12~16μm）QDVCSELs中量子点有源区的制备提供了理论指导.

关键词: 应变补偿, 量子点, 垂直腔面发射激光器

Abstract:

The GaNAs strain compensation layers for the growth quality of the InAs/GaAs quantum dots stack in quantum dots verticalcavity surfaceemitting lasers (QDVCSELs) are investigated. The influences of different concentrations and locations of the compensation is obtained. The approach in determining the optimal compensation parameters is also achieved. We give instructions in fabricating the QD active region in QDVCSELs of long wavelength (12-16μm).

Key words: strain compensation, quantum dots, verticalcavity surfaceemitting lasers

冯昊,俞重远,刘玉敏. 长波长QDVCSELs中的应变补偿理论[J]. 北京邮电大学学报, 2010, 33(6): 84-87.

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长波长QDVCSELs中的应变补偿理论

Analysis on Strain Compensation in LongWavelength QDVCSELs

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