Ⅲ-Ⅴ Nanowires and Heterostructures: Growth and Applications

doi:10.13190/j.jbupt.2021-201

Journal of Beijing University of Posts and Telecommunications ›› 2022, Vol. 45 ›› Issue (3): 1-6,25.doi: 10.13190/j.jbupt.2021-201

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Ⅲ-Ⅴ Nanowires and Heterostructures: Growth and Applications

YAN Xin, ZHANG Xia, REN Xiaomin

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China

Received:2021-09-20 Online:2022-06-28 Published:2022-06-01

Abstract

Abstract: Ⅲ-Ⅴ nanowire has been attracting much attention in the field of semiconductor optoelectronics due to the unique structural features and novel physical properties. In recent years, great progress has been made in the fabrication of Ⅲ-Ⅴ nanowires and heterostructures, which has shown great application potential in new-generation optoelectronic devices such as lasers, photodetectors, and solar cells. A review is presented about recent progress on Ⅲ-Ⅴ semiconductor nanowires, including the morphology and crystal structure of Ⅲ-Ⅴ nanowire grown by different methods, the fabrication method and physical properties of Ⅲ-Ⅴ nanowire heterostructures, and the main progress of Ⅲ-Ⅴ nanowire optoelectronic devices. Finally, some light on the main challenges and development directions of this field is shed.

Key words: Ⅲ-Ⅴ nanowire, heterostructure, laser, photodetector, solar cell

CLC Number:

TN303

YAN Xin, ZHANG Xia, REN Xiaomin. Ⅲ-Ⅴ Nanowires and Heterostructures: Growth and Applications[J]. Journal of Beijing University of Posts and Telecommunications, 2022, 45(3): 1-6,25.

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Ⅲ-Ⅴ Nanowires and Heterostructures: Growth and Applications

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