Analysis on Strain Compensation in LongWavelength QDVCSELs

doi:10.13190/jbupt.201006.84.158

JOURNAL OF BEIJING UNIVERSITY OF POSTS AND TELECOM ›› 2010, Vol. 33 ›› Issue (6): 84-87.doi: 10.13190/jbupt.201006.84.158

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Analysis on Strain Compensation in LongWavelength QDVCSELs

Received:2010-01-05 Revised:2010-01-11 Online:2010-12-28 Published:2011-01-07
Contact: Feng Hao E-mail:fenghao@bupt.edu.cn

Abstract

Abstract:

The GaNAs strain compensation layers for the growth quality of the InAs/GaAs quantum dots stack in quantum dots verticalcavity surfaceemitting lasers (QDVCSELs) are investigated. The influences of different concentrations and locations of the compensation is obtained. The approach in determining the optimal compensation parameters is also achieved. We give instructions in fabricating the QD active region in QDVCSELs of long wavelength (12-16μm).

Key words: strain compensation, quantum dots, verticalcavity surfaceemitting lasers

References

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Analysis on Strain Compensation in LongWavelength QDVCSELs

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