[1] Mukai K, Nakata Y, Otsubo K, et al. 1.3μm CW lasing characteristics of self-assembled InGaAs/GaAs quantum dots[J]. IEEE J Quantum Electron, 2000, 36(4): 472. [2] Mikhrin S S, Kovsh A R, Krestnikov I L, et al. High power temperature-insensitive 1.3μm InAs/InGaAs/GaAs quantumdot lasers[J]. Semicond Sci Technol, 2005, 20(5): 340-342. [3] Tatebayashi J, Hatori N, Ishida M, et al. 1.28μm lasing from stacked InAs/GaAs quantum dots with low-temperature-grown AlGaAs cladding layer by metal-organic chemical vapor deposition[J]. Appl Phys Lett, 2005, 86(5): 053107. [4] Oshima R, Takata A, Okada Y. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells[J]. Appl Phys Lett, 2008, 93(8): 083111. [5] Nuntawong N, Xin Y C, Birudavolu S, et al. Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition [J]. Appl Phys Lett, 2005, 86(19): 193115. [6] Lin C H, Pai W W, Chang F Y, et al. Comparative study of InAs quantum dots with different InGaAs capping methods[J]. Appl Phys Lett, 2007, 90(6): 063102. [7] Robach R, Schulz W M, Reischle M, et al. Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature[J]. J Crys Growth, 2008, 310(23): 5089. [8] Tatebayashi J, Nuntawong N, Xin Y C, et al. Ground-state lasing of stacked InAs/GaAs quantum dots with GaP strain-compensation layers grown by metal organic chemical vapor deposition[J]. Appl Phys Lett, 2006, 88(22): 221107. [9] Zhang W, Uesugi K, Suemune I. The application of an InGaAs/GaAsN strain-compensated superlattice to InAs quantum dots[J]. J Appl Phys, 2006, 99(10): 103103. [10] Suzuki R, Miyamoto T, Sengoku T, et al. Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer[J]. Appl Phys Lett, 2008, 92(14): 141110. [11] Henini M. Dilute nitride semiconductors[M]. London: Elsevier Ltd, 2005: 3. [12] Kunert R, Schll E. Strain-controlled correlation effects in self-assembled quantum dot stacks[J]. Appl Phys Lett, 2006, 89(15): 153103. [13] Penev E, Kratzer P, Sheffler M. Effect of strain on surface diffusion in semiconductor heteroepitaxy[J]. Phys Rev B, 2001, 64(8): 085401. |