Journal of Beijing University of Posts and Telecommunications

  • EI核心期刊

JOURNAL OF BEIJING UNIVERSITY OF POSTS AND TELECOM ›› 2016, Vol. 39 ›› Issue (4): 50-55.doi: 10.13190/j.jbupt.2016.04.010

• Papers • Previous Articles     Next Articles

A Method of Short-Period Storage Based on DDR2 SDRAM

TANG Ping, GAO Fei, ZHANG Li, JIANG Zhi-ke   

  1. School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China
  • Received:2015-12-08 Online:2016-08-28 Published:2016-08-28

Abstract: To meet the storage requirements of mass data in a high-speed and real-time system, a short-period storage method based on double data rate 2 synchronous dynamic random access memory(DDR2 SDRAM) was proposed. First, the basic principles of reading and writing operation of DDR2 SDRAM controller are summarized. Then, in order to solve the practical problem of reading and writing data in different orders continuously and alternately, a short-period storage method was designed, which can be divided into two modes of single burst and multiple burst according to the different data access modes. In the multiple burst mode of short-period storage method, the storage structure of fewer rows and more columns can further improve the speed of reading and writing data. At last, the performance analysis and function simulation of the short-period storage method based on DDR2 SDRAM is carried out. It is shown that the short-period storage method in the mode of multiple burst can achieve the storage requirement with a small amount of internal storage resource of field-programmable gate array(FPGA) and high speed of reading and writing data.

Key words: double data rate 2 synchronous dynamic random access memory, short-period storage, alternate access, multiple burst, fewer rows and more columns

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